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BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 -- 23 June 2005 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection.
1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor
1.3 Applications
s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control
1.4 Quick reference data
s VDS 40 V s ID 155 A s RDSon = 4.7 m (typ) s VF = 658 mV (typ) s SF = -1.54 mV/K (typ) s ID/Isense = 615 (typ)
2. Pinning information
Table 1: Pin 1 2 3 4 5 6 7 mb Pinning Description gate (G) Isense anode (A) drain (D) cathode (K) kelvin source source (S) mounting base; connected to drain (D)
4 123 567 G mb D A
Simplified outline
Symbol
SOT427 (D2PAK)
Isense S K Kelvin source
sym110
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7C06-40AITE D2PAK Description Plastic single-ended surface mounted package; 7 leads (one lead cropped) Version SOT427 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 C; VGS = 10 V; see Figure 2 IDM Ptot IGS(CL) Visol(FET-TSD) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current FET to temperature sense diode isolation voltage storage temperature junction temperature reverse drain current peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 50 ; starting at Tj = 25 C Human Body Model; C = 100 pF; R = 1.5 k
[1] [2] [1] [2] [2]
Conditions RGS = 20 k
Min -55 -55 -
Max 40 40 20 155 75 75 620 272 10 50 100 +175 +175 155 75 620 1.46
Unit V V V A A A A W mA mA V C C A A A J
Tmb = 25 C; pulsed; tp 10 s; see Figure 3 Tmb = 25 C; see Figure 1 continuous tp = 5 ms; = 0.01
Source-drain diode
Avalanche ruggedness
Electrostatic discharge Vesd electrostatic discharge voltage, pins 1, 2, 4, 6, 7 6 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
2 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
120 Pder (%) 80
03na19
160 ID (A) 120
03ng16
80 capped at 75A due to package 40 40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
P tot P der = ---------------------- x 100 % P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature
103 ID (A) 102 capped at 75 A due to package DC 10 Limit RDSon = VDS/ID
Fig 2. Continuous drain current as a function of mounting base temperature
03ni28
tp = 10 s 100 s
1 ms 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 C; IDM single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
3 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-a) Rth(j-mb)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base see Figure 4 Conditions
[1]
Min -
Typ -
Max 50 0.55
Unit K/W K/W
Mounted on printed-circuit board; minimum footprint
1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 0.02 10-2 single shot
tp P
03ni29
=
tp T
t T
10-3 10-6
10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
4 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate leakage current IG = 1 mA; -55 C < Tj < +175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; see Figure 7 and 8 Tj = 25 C Tj = 175 C VF SF Vhys ID/Isense forward voltage of temperature sense diode temperature coefficient of temperature sense diode forward voltage hysteresis of temperature sense diode IF = 250 A IF = 250 A; -55 C < Tj < +175 C 125 A < IF < 250 A 648 -1.4 25 585 4.7 658 -1.54 32 615 6 11.4 668 -1.68 50 645 m m mV mV/K mV 22 1000 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 40 36 V V Min Typ Max Unit Static characteristics
ratio of drain current to sense VGS = 10 V; -55 C < Tj < +175 C current total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance VGS = 10 V; VDS = 32 V; ID = 25 A; see Figure 14 VGS = 10 V; VDS = 32 V; ID = 25 A; see Figure 14 VGS = 10 V; VDS = 32 V; ID = 25 A; see Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss 120 19 50 4300 1400 820 nC nC nC pF pF pF
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
5 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Table 5: Characteristics ...continued Tj = 25 C unless otherwise specified. Symbol td(on) tr td(off) tf LD LS Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance Conditions VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad IS = 40 A; VGS = 0 V; see Figure 18 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V Min Typ 35 115 155 110 2.5 7.5 Max Unit ns ns ns ns nH nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 96 224 1.2 V ns nC
300 ID (A) 200 8.0 10.0 20.0
03ni21
18 RDSon (m) 12
03ni22
7.5 Label is VGS (V) 7.0
6.5
6.0
100
5.5 5.0 4.5 4.0
6
0 0 2 4 6 8 10 VDS (V)
0 4 8 12 16 VGS (V) 20
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
6 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
12 RDSon (m) 10 Label is VGS (V) 5.5
03ni23
2.0 a 1.6
03ni30
6.0 8 1.2
6
7.0 8.0 9.0 10.0
0.8
4
0.4
2 0 40 80 ID (A) 120
0 -60
0
60
120 Tj (C)
180
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
10-1 ID (A) max 10-2 min typ max
03aa35
Fig 7. Drain-source on-state resistance as a function of drain current; typical values
5 VGS(th) (V) 4
03aa32
3
typ
10-3
2
min
10-4
1
10-5
0 -60
0
60
120 Tj (C)
180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature
Fig 10. Sub-threshold drain current as a function of gate-source voltage
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
7 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
80 gfs (S) 60
03ni24
8 C (nF) 6
03ne67
40
4
Ciss
20
2 Coss Crss
0 0 25 50 75 ID (A) 100
0 10-1
1
10 VDS (V)
102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
10 VGS (V) 8
03ni26
100 ID (A) 75
03ni25
6 50 Tj = 175 C 25 C 4
VDS = 14 V
32 V
25 2
0 0 2 4 VGS (V) 6
0 0 40 80 QG (nC) 120
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
8 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
700 VF (mV) 600
03ne84
-1.70 SF (mV/K) -1.60 max
03ne85
typ -1.50
500
min 400 0 50 100 150 Tj (C) 200 -1.40 645
655
665 VF (mV)
675
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values
800 ID/Isense 700
003aab048
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values
100 IS (A) 75 Tj = 175 C 25 C
03ni27
600
50
500
25
400 4 8 12 16 VGS (V) 20
0 0 0.4 0.8 VSD (V) 1.2
ID = 25 A
VGS = 0 V
Fig 17. Drain-sense current ratio as a function of gate voltage; typical values
Fig 18. Source (diode forward) current as function of source-drain (diode forward) voltage; typical values
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
9 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface mounted package (D2PAK); 7 leads (one lead cropped) SOT427
A E A1
D1 mounting base
D
HD
4
Lp
1
7
b e e e e e e
c Q
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT427
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-10-13 05-03-09
Fig 19. Package outline SOT427 (D2PAK)
BUK7C06-40AITE_4 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
10 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
8. Soldering
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.27 (4x)
2.54 8.92
0.70 0.80
MSD059
Dimensions in mm
Fig 20. Reflow soldering footprint for SOT427
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
11 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
9. Revision history
Table 6: Revision history Release date 20050623 Data sheet status Product data sheet Product data sheet Change notice Doc. number Supersedes BUK7C06-40AITE_3 Document ID BUK7C06-40AITE_4 Modifications: BUK7C06-40AITE_3 Modifications:
* * * *
Figure 16: graph corrected 9397 750 15176 BUK7C06_40AITE-02 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Section 1 "Product profile" and Table 5: ID/Isense values changed. Figure 17: graph changed. Product data 9397 750 12487 BUK7C06_40AITE-01 Section 3 "Ordering information" added Section 1 and Table 5: RDSon typical value changed Section 1 and Table 5: ID/Isense typical value changed Table 5: Qg(tot), Qgs and Qgd typical values changed Table 5: Ciss, Coss and Crss typical values changed Figure 5, 6, 7, 11, 13, 17, 18: graphs changed Product data 9397 750 09873 -
20050616
BUK7C06_40AITE-02 20040129 Modifications:
* * * * * *
BUK7C06_40AITE-01 20020717
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
12 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
10. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BUK7C06-40AITE_4
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 -- 23 June 2005
13 of 14
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document number: BUK7C06-40AITE_4
Published in The Netherlands

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